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Ceramic High Temperature T-ESC®
ProTec®´s High Temperature ElectroStatic chucking solutions are used in high temperature vacuum and atmospheric processes for chucking glass or foil. The design is customized to your specific needs. By that it is e.g. possible to achieve high cooling efficiencies in rather hot coating applications even under vacuum atmosphere. Furthermore in applications where the temperature needs to stay hot to achieve the desired coating functions the HT electrostatic chuck or HT T-ESC® is the solution of choice. Depending on application the High Temperature electrostatic chuck and HT T-ESC® can be used in Inline or Cluster based application. The chuck is powered by a stationary or mobile High Voltage Measurement Controller from ProTec®.
Ceramic High Temperature T-ESC®
High Temperature suited up to 300 °C, special version > 300 °C
100% customized in size, shape, functionality to best customer benefit
Size starting from very small 10x10mm² to large formats like Gen 10.5
PVD / Sputter
During Wafer processing the wafer needs to be transferred back and forth from cassettes to tools and also inside the tools from on station to the other. For fragile substrates this is already challenging, because they tend do brake or get cracks, which can lead to future breakage. Also bowing of thinned substrates brings a lot of trouble for all tooling because they are usually not designed for this very special operation. Temporary bonding with our T-ESC® is a great help here as the processing tools only see a standard wafer and trouble with handling, therefore wafer breakage is eliminated.
Basically processes starting with a solid or liquid phase forced into the gas phase and building a solid again are called Physical Vapor Deposition. Sputtering is the most famous of these. Ions are accelerated and hit a target material, the ion bombardment results in free particles from the target material, these particles form a conformal layer on the substrate. There are different methods for the Sputtering process depending on the target material and the desired layer properties, e.g. by adding reactive gases into the chamber a combination of target material and gases build the layer on the substrate.
Another option is to heat a material until it gets into the gas phase and then guide it to the target substrate, this is called evaporation.
Plasma Enhanced Chemical Vapor Deposition usually uses temperatures which are lower than in a pure CVD step, a plasma leads to a split of the reactive gases, which are then deposited on the substrate.
During Organic Vapor Phase Deposition (OVPD), organic material is heated up and evaporated. Then the molecules are mixed with a gas which is blown to the substrate surface. The substrate is cooled actively and the organic molecules built a thin film by condensing on the substrate surface. The active cooling inside the vacuum atmosphere is greatly improved by using ProTec electrostatic chucks.
Chemical Vapor Deposition uses gases to deposit layers on the substrate. Depending on the specific type of CVD different temperatures and materials are used, leading to layers which vary in density and stability according to CVD type. The higher the temperature, the better the layer properties and usually the longer the processing time, but not all substrate materials or already built structures can withstand the high temperatures. So cooling is needed for the substrate or choosing a low temperature CVD process type.
Plasma Clean or Ashing is usually used to clean the substrate surface from residues of resist or other contamination. The gas is ionized and reacts with the resist forming ash which is pumped out the chamber by vacuum pumps.
A fully automated electrostatic chucking/de-chucking unit with up to 120 wafers and/or T-ESC® packages per hour, guarantying an highest yield during handling and many diagnostics features.Learn More