高温静电夹盘和 HT T-ESC®

典型应用

  • 高温适合温度高达 300°C,特殊设计 > 300°C

  • 100% 定制尺寸、形状和功能,以最大限度地为客户带来利益

  • 尺寸从小到 10x10mm² 至大型如 Gen 10.5

推荐工艺:

  • 持取

  • 溅镀

  • 等离子体增强化学气相沉积(PECVD

  • 有机气相沉积(OVPD

  • 物理气相沉积(PVD

  • 化学气相沉积(CVD

  • 等离子清洗

Standard High-Temperature Transfer ElectroStatic Carrier Technology

PECVD

Plasma Enhanced Chemical Vapor Deposition usually uses temperatures which are lower than in a pure CVD step, a plasma leads to a split of the reactive gases, which are then deposited on the substrate.

OVPD

During Organic Vapor Phase Deposition (OVPD), organic material is heated up and evaporated. Then the molecules are mixed with a gas which is blown to the substrate surface. The substrate is cooled actively and the organic molecules built a thin film by condensing on the substrate surface. The active cooling inside the vacuum atmosphere is greatly improved by using ProTec electrostatic chucks.

CVD

Chemical Vapor Deposition uses gases to deposit layers on the substrate. Depending on the specific type of CVD different temperatures and materials are used, leading to layers which vary in density and stability according to CVD type. The higher the temperature, the better the layer properties and usually the longer the processing time, but not all substrate materials or already built structures can withstand the high temperatures. So cooling is needed for the substrate or choosing a low temperature CVD process type.

Plasma Cleaning / Ashing

Plasma Clean or Ashing is usually used to clean the substrate surface from residues of resist or other contamination. The gas is ionized and reacts with the resist forming ash which is pumped out the chamber by vacuum pumps.

我们的机器

Maschine Protec ACU 3000

ACU 3000

ProTec® 的自动夹持装置(ACU 3000)专为高产量临时接合和分离应用而设计,每小时可处理多达 120 个晶圆 + T-ESC® 封装。

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MCU 3000 freigestellt

MCU 3000

手动夹持装置(MCU 3000)用于临时将器件晶圆与我们的 T-ESC® 接合和分离。它适用于低产量或研发生产,经过培训的操作员每小时可以接合和分离 15-25 个晶圆。3”/4”/6”, 6”/8”和 8”/12”,以及按需定制版本

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