高温静电夹盘和 HT T-ESC®
高温适合温度高达 300°C，特殊设计 > 300°C
尺寸从小到 10x10mm² 至大型如 Gen 10.5
Plasma Enhanced Chemical Vapor Deposition usually uses temperatures which are lower than in a pure CVD step, a plasma leads to a split of the reactive gases, which are then deposited on the substrate.
During Organic Vapor Phase Deposition (OVPD), organic material is heated up and evaporated. Then the molecules are mixed with a gas which is blown to the substrate surface. The substrate is cooled actively and the organic molecules built a thin film by condensing on the substrate surface. The active cooling inside the vacuum atmosphere is greatly improved by using ProTec electrostatic chucks.
Chemical Vapor Deposition uses gases to deposit layers on the substrate. Depending on the specific type of CVD different temperatures and materials are used, leading to layers which vary in density and stability according to CVD type. The higher the temperature, the better the layer properties and usually the longer the processing time, but not all substrate materials or already built structures can withstand the high temperatures. So cooling is needed for the substrate or choosing a low temperature CVD process type.
Plasma Cleaning / Ashing
Plasma Clean or Ashing is usually used to clean the substrate surface from residues of resist or other contamination. The gas is ionized and reacts with the resist forming ash which is pumped out the chamber by vacuum pumps.